SDS511Q

Marking：S1*；Package：SOD-523；Switching Diode

Features •Ultrahighspeedswitchingapplication •Lowforwardvoltage:VF=0.9V(Typ.) •Fastreverserecoverytime:trr=1.6㎱(Typ.) •Smalltotalcapacitance:CT=2.2㎊(Typ.)

SKY13317-373LF

Marking：S17；20 MHz to 6.0 GHz pHEMT GaAs SP3T Switch

Applications •802.11a/b/g/nWLANnetworks •FordevicesthatsupportBluetooth®signals Features •Positivelowvoltagecontrol:0/1.8to5.0V •Lowinsertionloss:0.5dB@2.5GHz,0.9dB@6GHz •Highisolation:25dBupto6GHz •Excellentlinearityperformance:P1dB=+29dBm •

SKY13411-374LF

Marking：S11；0.1 to 6.0 GHz DPDT Switch

Applications Dual-bandwirelessLANs(802.11a/b/g/n) Diversityantennaswitching Features Broadbandfrequencyrange:0.1to6.0GHz Positivecontrolvoltagerange:1.8to5.0V Lowinsertionloss:0.6dBtypical@2.5GHz Highisolation:23.5dBtypical@2.5GHz P1dB:+31

SKY18108-11

Marking：S108；0.4-2.7 GHz SP9T Antenna Switch Module

Applications •Dual-modehandsets(GSM/EDGE,Quad/TD-SCDMAorWCDMAdualmode) •Low-cost,smallfootprintFEMs Features •Supportsquad-bandGSMandTD-SCDMAorGSMandWCDMAdual-modefor2Gand3Gsystems •ThreeTD/WCDMAportsaredesignedfor3Ghighpowertransmit/receiveoperation •

SKY67107-306LF

Marking：S107；2.3-2.8 GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier

Applications •LTEcellularinfrastructureandISMbandsystems •Ultralow-noise,highgainandhighlinearitysystems •Digitalsatelliteradio Features •Ultra-lowNF:0.85dB@2.6GHz •Highgain:32dB@2.6GHz •Lowquiescentcurrent:125mA •Stage1and2adjustablecurrent •

SM12

Marking：S12；Package：SOT-23；2-Line Uni-directional TVS Diode Array

Features 350Wpeakpulsepower(8/20μs) Protectstwouni-directionallines Ultralowleakage:nAlevel Operatingvoltage:12V Lowclampingvoltage Complieswithfollowingstandards:–IEC61000-4-2(ESD)immunitytestAirdischarge:±30kVContactdischarge:±30kV–IEC61000-4-5(Light

SM15

Marking：S15；Package：SOT-23；2-Line Uni-directional TVS Diode Array

Features 300Wpeakpulsepower(8/20μs) Protectstwouni-directionallines Ultralowleakage:nAlevel Operatingvoltage:15V Lowclampingvoltage Complieswithfollowingstandards:–IEC61000-4-2(ESD)immunitytestAirdischarge:±30kVContactdischarge:±30kV–IEC61000-4-5(Lightning)10A(

SMBT2222A

Marking：s1P；Package：SOT-23；NPN Silicon Switching Transistor

NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

SMBT2222A

Marking：s1P；Package：SOT-23；Low collector-emitter saturation voltage

NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

SMBT3904

Marking：s1A；Package：SOT-23；NPN Silicon Switching Transistor

NPNSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage •Complementarytypes:SMBT3906...MMBT3906 •SMBT3904S:Fororientat