S-L2SA1365FLT1G资料datasheet下载库存现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
S-L2SA1365FLT1G	文件：1.08744 Mbytes Page：3 Pages	General Purpose Transistor DESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini package for eas 文件：1.08744 Mbytes 页数：3 Pages	LRC 乐山无线电	LRC
L2SA1365FLT1G	文件：1.08744 Mbytes Page：3 Pages	General Purpose Transistor DESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini package for eas 文件：1.08744 Mbytes 页数：3 Pages	LRC 乐山无线电	LRC
S-LMBR30S100SCN56	文件：0 bytes Page：0 Pages	LRC乐山无线电	LRC乐山无线电上传：深圳市三芯电子有限公司	LRC乐山无线电

更多S-L2SA1365FLT1G供应商更新时间2025-10-6 11:04:00