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SI2302B

SOT-23Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

SI2302CDS

N-Channel20-V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •Materialcategorization:   fordefinitionsofcompliancepleasesee   www.vishay.com/doc?99912 APPLICATIONS •Loadswitchingforportabledevices •DC/DCconverter

VishayVishay Siliconix

威世科技威世科技半导体

SI2302CDS

N-Channel20V(D-S)MOSFET

TFUNKVishay Telefunken

威世威世(VISHAY)集团

SI2302CDS

N-Channel20V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SI2302DDS

N-Channel20V(D-S)MOSFET

TFUNKVishay Telefunken

威世威世(VISHAY)集团

SI2302DDS

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchingforPortableDevices •DC/DCConverter

VishayVishay Siliconix

威世科技威世科技半导体

SI2302DDS

N-Channel20V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SI2302DDS

N-Channel20V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •100Rgtested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Loadswitchingforportabledevices •DC/DCconverter

VishayVishay Siliconix

威世科技威世科技半导体

SI2302DS

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. Productavailability:SI2302DSinSOT23. Features TrenchMOS™technology Veryfastswitching Logiclevelcompatible Subminiaturesurfacemountpackage.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

SI2302DS

N-ChannelEnhancementMOSFET

■Features ●VDS=20V ●RDS(on)=85mΩ@VGS=4.5V,ID=3.6A ●RDS(on)=115mΩ@VGS=2.5V,ID=3.1A

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

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