2 – 18 GHz GaN Driver Amplifier

Product Features • Frequency Range: 2 – 18 GHz • Saturated Output Power: 45 dBm (PIN = 3 dBm) • Power Gain: 42 dB (PIN = 3 dBm) • Solid State MMIC Reliability • Instant On (no warm-up) • Blank Mode (Low Power Consumption) • Fast DC Pulsing (DRAIN_EN) Applications • TWTA Replacement • E

文件：646.22 Kbytes 页数：15 Pages

QORVO

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6 – 18 GHz Wideband GaN Amplifier

Product Features • Frequency Range: 6 – 18 GHz • Saturated Output Power: 53.9 dBm (PIN = 43 dBm) • Large Signal Gain: 10.9 dB (PIN = 43 dBm) • Solid State MMIC Reliability • Multi-Element Redundancy • Instant On (no warm-up) • Integrated Bias Card Performance is typical across frequency. P

文件：780.92 Kbytes 页数：10 Pages

QORVO

威讯联合

P Channel Thermal FET

文件：106.58 Kbytes 页数：8 Pages

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60V-40A Silicon N Channel Thermal FET Power Switching

文件：236.02 Kbytes 页数：8 Pages

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