High Linearity 쩍 W Small Cell PA

Product Features 2.5 – 2.7 GHz Frequency Range Fully Integrated, 2 Stage Power Amplifier Internally Matched 50 Ω Input/Output −47 dBc ACLR at Pavg = +27 dBm 34 dB Gain 14 PAE at +27 dBm 420 mA Quiescent Current On-chip Bias Control and Temp. Comp. Circuit

文件：539.46 Kbytes 页数：8 Pages

QORVO

威讯联合

Single N-Channel, 2.5V Specified MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s high cell density DMOS technology process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have

文件：49.01 Kbytes 页数：3 Pages

FAIRCHILD

仙童半导体

N-Channel 2.5-V (G-S) MOSFET

N-Channel 2.5-V (G-S) MOSFET 2.5-V Rated

文件：39.73 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Single N-Channel, 2.5V Specified MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s high cell density DMOS technology process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have

文件：49.01 Kbytes 页数：3 Pages

FAIRCHILD

仙童半导体