QPA2212D数据手册Qorvo中文资料规格书

描述 Description

Qorvo's QPA2212D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 27 and 31 GHz, it achieves 10 W linear power with −25 dBc intermodulation distortion products and 22 dB small signal gain. Saturated output power is 25 W with power-added efficiency of 25%.
QPA2212D is ideally suited to support satellite communications and 5G infrastructure.
To simplify system integration, the QPA2212D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports.
The QPA2212D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.

特性 Features

• Frequency Range: 27 – 31 GHz
• PSAT (PIN = 25 dBm): > 43.4 dBm
• PAE (PIN = 25 dBm): > 25 %
• Power Gain (PIN = 25 dBm): > 18.4 dB
• IMD3 (at 37 dBm/tone): D = 22 V, IDQ = 460 mA
• Die Dimensions: 3.630 x 5.040 x 0.050 mm

应用 Application

• 5G Infrastructure
• Satellite Communications