QN6101M6N数据手册uPI(UBIQ)中文资料规格书
QN6101M6N规格书详情
描述 Description
The QN6101M6N is a high performance trench N-channel MOSFET which utilizesextremely high cell density to provide low Rdson and gate charge characteristics.It is ideally suited to support synchronous buck converter applications.
The QN6101M6N meets RoHS and Green Product requirements while supporting full functionreliability.
特性 Features
• Advanced high cell density Trench technology
• Super Low Gate Charge
• Low Gate drive
应用 Application
• Synchronous rectifier for Consumer/Computing/Industry Power Supply
技术参数
- 制造商编号
:QN6101M6N
- 生产厂家
:uPI(UBIQ)
- Package Type
:PRPAK5*6
- Configuration
:Single
- MOSFET Type
:N
- VDS (V)
:60
- VGS (V)
:±20
- Vth max. (V)
:2.5
- RDS(ON) (mΩ)max. at VGS10V
:2.8
- RDS(ON) (mΩ)max. at VGS4.5V
:4.0
- Ciss (pF)
:4727
- Coss (pF)
:757
- Crss (pF)
:80
- Qg(nC)
:68
- Qgs(nC)
:13
- Qgd(nC)
:9.1
- ID (A) Tc=25℃
:111
- ID (A) Tc=100℃
:70
- ID (A) TA=25℃
:21
- ID (A) TA=70℃
:17
- EAS.max(mj)
:132.1
- PD(W) Tc=25℃
:62
- PD (W) TA=25℃
:2.2
- ESD Diode
:NO
- Schottky Diode
:NO
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
17+ |
SOT-23 |
6200 |
100%原装正品现货 |
询价 | ||
NEC |
23+ |
SOT233 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
Renesas |
MMSC-59 |
85000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
Renesas |
20+ |
MMSC-59 |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
台湾力智 |
2447 |
PRPAK5*6 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
Renesas |
16+ |
MMSC-59 |
85000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
询价 | ||
NEC |
23+ |
SOT23-3 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NK/南科功率 |
2025+ |
PRPAK5*6 |
986966 |
国产 |
询价 | ||
NEC |
2022+ |
SOT-23 |
20000 |
只做原装进口现货.假一罚十 |
询价 |