Low Voltage Power MOSFET < 40V

The QM3816N6 is the highest performance t rench Dual N-Channel MOSFET withextreme h igh cell density , which provide excellentRDSON and gate charge for mostof thesynchronous buck converter applications.\n\n The QM3816N6 meet the RoHS and GreenProduct requirement with full function reliabilitya pp ·Advanced high cell density Trench technology.\n ·Super Low Gate Charge.\n ·Excellent CdV/dt effect decline.\n ·100% EAS Guaranteed.\n ·Green Device Available.;

uPI(UBIQ)

力智电子

Dual N-Channel Fast Switching MOSFET

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UPI

力智电子

TO-252

VB

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模块

MITSUBISHI

三菱电机

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LGA(2x2)

上海矽睿

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