N-Channel MOSFET uses advanced trench technology

文件：1.43681 Mbytes 页数：4 Pages

DOINGTER

杜因特

Dual N-Ch 30V Fast Switching MOSFETs

uPI(UBIQ)

力智

GaAs HBT PRE-DRIVER AMPLIFIER

Product Description The RF3802 is specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance dual-stage amplifier achieves high output power over a broad frequency range. The RF3802 amplifier also provides excellent

文件：62.15 Kbytes 页数：2 Pages

RFMD

威讯联合

GaAs HBT PRE-DRIVER AMPLIFIER

文件：1.11162 Mbytes 页数：12 Pages

RFMD

威讯联合

GaAs HBT PRE-DRIVER AMPLIFIER

文件：1.21162 Mbytes 页数：12 Pages

RFMD

威讯联合