Low Voltage Power MOSFET < 40V

The QM2502W is the highest performance trenchN-ch MOSFETs with extremehigh cell density ,which provide excellent RDSON and gate charge f or most of thesmall power switching and loadswitch applications.\n\n The QM2502W meet the RoHS and GreenProduct requirement with full function reliabilitya ppro ·Advanced high cell density Trench technology.\n ·Super Low Gate Charge.\n ·Excellent CdV/dt effect decline.\n ·Green Device Available.;

uPI(UBIQ)

力智电子

Dual N-Ch 20V Fast Switching MOSFETs

文件：361.32 Kbytes 页数：4 Pages

UPI

力智电子

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 25 Amperes

FEATURES * Low leakage * Low forward voltage * Surge overload rating : 350 amperes peak * Mounting position: Any * Ideal for printed circuit boards * High forward surge current capability

文件：286.65 Kbytes 页数：5 Pages

RECTRON

丽正国际

SILICON BRIDGE RECTIFIERS

文件：19.81 Kbytes 页数：2 Pages

EIC

SILICON BRIDGE RECTIFIERS

文件：399.31 Kbytes 页数：2 Pages

EIC