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RMP12N60TI

N-CHANNELENHANCEMENTMODEMOSFET

FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest

RECTRON

Rectron Semiconductor

SCT12N60FD

Triac

ThisdeviceissuitableforlowpowerACswitchingapplication,phasecontrolapplicationsuchasfanspeedandtemperaturemodulationcontrol,lightingcontrolandstaticswitchingrelay. Features RepetitivePeakOff-StateVoltage:VDRM=600V R.M.SOn-StateCurrent:IT(RMS)=12A Gat

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

SCT12N60P

Triac

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

SFF12N60

N-ChannelMOSFET

semiWell

SemiWell Semiconductor

SIF12N60C

N-CHANNELPOWERMOSFET

SISEMICShenzhen SI Semiconductors Co.,LTD.

深爱半导体深圳深爱半导体股份有限公司

SIHA12N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHA12N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHA12N60E

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

SIHB12N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHB12N60E

ESeriesPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •

VishayVishay Siliconix

威世科技威世科技半导体

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