QM0016P

N-Ch 100V Fast Switching MOSFETs; ·Advanced high cell density Trench technology.\n ·Super Low Gate Charge.\n ·Excellent CdV/dt effect decline.\n ·Green Device Available.;

The QM0016P is the highest performance trenchN-ch MOSFETs with extremehigh cell density ,which provide excellent RDSON and gate chargefor most of thesynchronous buck converterapplications.\n\n The QM0016P meet the RoHS and Green Productrequirement , 100% EAS guaranteedwith fullfunction reliability approved.\n\n

QM0016P

N-Ch 100V Fast Switching MOSFETs

QM0016P

N-Channel 100-V (D-S) MOSFET

QM0016P

N-Channel MOSFET uses advanced trench technology

QM0016S

N-ChannelMOSFETusesadvancedtrenchtechnology

QM0016S

N-Channel100V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •ExtremelyLowQgdforSwitchingLosses •100RgTested •100AvalancheTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

QPA0016

13.75–14.5GHz15WattGaNPowerAmplifier

ProductOverview Qorvo'sQPA0016isahighpower,packagedKu-Band MMICamplifierfabricatedusingQorvo'sproduction0.15 umGaN-on-SiCprocess(QGaN15).TheQPA0016targets the13.75-14.5GHzSatcombandwhileproviding5-Watts oflinearpowerwiththird-orderintermodulationdistortion pr

QPA0016EVB

13.75–14.5GHz15WattGaNPowerAmplifier

ProductOverview Qorvo'sQPA0016isahighpower,packagedKu-Band MMICamplifierfabricatedusingQorvo'sproduction0.15 umGaN-on-SiCprocess(QGaN15).TheQPA0016targets the13.75-14.5GHzSatcombandwhileproviding5-Watts oflinearpowerwiththird-orderintermodulationdistortion pr

QTAN0016

DiagnosticModesforQTICs

QTCM-0016V

QTCMcalibrationmanifoldbody,brass