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SFAF502G

PlasticUltra-FastRecoverRectifierReverseVoltage100to600VForwardCurrent5.0A

ReverseVoltage100to600V ForwardCurrent5.0A Features ·LowPowerLoss,HighEfficiency ·LowForwardVoltageDrop ·HighCurrentCapability ·LeadandbodyaccordingwithRoHSstandard MechanicalData ·Case:MoldedPlastic ·Polarity:Symbolsmoldedormarkedonbo

DACHANGRugao Dachang Electronics Co., Ltd

大昌电子如皋市大昌电子有限公司

SFAF502G

Isolated5.0AMP.GlassPassivatedSuperFastRectifiers

Features Highefficiency,lowVF Highcurrentcapability Highreliability Highsurgecurrentcapability Lowpowerloss. Foruseinlowvoltage,highfrequencyinventor,freewheeling,andpolarityprotectionapplication MechanicalData Case:ITO-220ACmoldedplastic Ep

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

SFAF502G

PlasticUltra-FastRecoverRectifier

DACHANGRugao Dachang Electronics Co., Ltd

大昌电子如皋市大昌电子有限公司

SFAF502G

IsolatedGlassPassivatedSuperFastRectifiers

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

SFF502G

Isolation5.0AMPS.GlassPassivatedSuperFastRectifiers

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

SFF502G

Isolated5.0AMPS.GlassPassivatedSuperFastRectifiers

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

SFF502G

5.0AMPSIsolatedGlassPassivatedSuperFastRectifier

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

SFP-502-C

SFP-502GigamonSystemsCompatibleTransceiverSFP1000Base-SX(850nm,MMF,550m)

Features ATGBICSSFP-5021000Base-SXsupportsadistanceofupto550movermulti-modefibre(MMF)usingawavelengthof850nmviaanLCconnector. Digitalopticalmonitoring(DOM)supportisalsopresentenablingreal-time monitoringoftheparametersofthefibre optictransceiver. It isaho

ATGBICS

ATGBICS by Approved Technology

SFR502

SOFTRECOVERYFASTSWITCHINGRECTIFIER

SOFTRECOVERYFASTSWITCHINGRECTIFIER VOLTAGERANGE50to1000Volts CURRENT5.0Ampere FEATURES ·Lowcoatconstruction ·Fastswitchingforhighefficency. ·Lowreverseleakage ·Highforwardsurgecurrentcapability ·Hightemperaturesolderingguaranteed:260℃/

MICMIC GROUP RECTIFIERS

昌福电子昌福电子有限公司

SFT502

5AMP200VoltsHIGHSPEEDNPNTransistor

Features: •RadiationTolerant •FastSwitching •HighFrequency,50MHzTypical •BVCEO150VoltsMin •HighLinearGain •VeryLowLeakageandSaturation •200ºCOperatingTemperature •GoldEutecticDieAttach •DesignedforComplementaryUsewithSFT501andSFT503

SSDI

Solid States Devices, Inc

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