QFI-1011-12

iglide® Q

Excellentwearresistance,especiallyfor extremeloads Recommendedforextremepvvalues Goodcoefficientoffriction Resistanttodirt

EIC1011-12

10.7-11.7GHz12-WattInternallyMatchedPowerFET

FEATURES •10.7–11.7GHzBandwidth •Input/OutputImpedanceMatchedto50Ohms •+40.5dBmOutputPowerat1dBCompression •6.0dBPowerGainat1dBCompression •27PowerAddedEfficiency •-46dBcIM3atPO=28.5dBmSCL •100TestedforDC,RF,andRTH

FLM1011-12F

X,Ku-BandInternallyMatchedFET

DESCRIPTION TheFLM1011-12FisapowerGaAsFETthatisinternallymatchedforstandardcommunicationbandstoprovideoptimumpowerandgainina50ohmsystem. Eudyna’sstringentQualityAssuranceProgramassuresthehighestreliabilityandconsistentperformance. FEATURES •HighOutputPowe

L-1011-12

CHO-STRAPINSULATEDGROUNDSTRAP

QSI-1011-12

iglide®Q

Excellentwearresistance,especiallyfor extremeloads Recommendedforextremepvvalues Goodcoefficientoffriction Resistanttodirt

XBP1011-12

TVSDiode

■FEATURES TerminalCapacitance:110pF ESDProtection:25kV EnvironmentallyFriendly:EURoHSCompliant,PbFree ■APPLICATIONS ●Portableequipment