SUR561J

EpitaxialplanarNPNsilicontransistor

Descriptions •Dualchipdigitaltransistor Features •TwoSRC1201ChipsinSOT-363Package. •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess

SUR561J

EpitaxialplanarNPNsilicontransistor

Descriptions •Dualchipdigitaltransistor Features •TwoSRC1201ChipsinSOT-363Package. •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess

TF561M

TO-2205AThyristor

TO-2205AThyristor ■Features ●Repetitivepeakoff-statevoltage:VDRM=200,400,600V ●Averageon-statecurrent:IT(AV)=5A ●Gatetriggercurrent:IGT=15mAmax

TF561S

TO-220F5AThyristor

■Features ●Repetitivepeakoff-statevoltage:VDRM=200,400,600V ●Averageon-statecurrent:IT(AV)=5A ●Gatetriggercurrent:IGT=15mAmax ●Isolationvoltage:VISO=1500V(50HzSinewave,RMS) ●ULapprovedtypeavailable

TF561S-A

TO-220F5AHighsensitiveThyristor

■Features ●Repetitivepeakoff-statevoltage:VDRM=400,600V ●Averageon-statecurrent:IT(AV)=5A ●HighsensitiveGatetriggercurrent:IGT=0.2mAmax ●Isolationvoltage:VISO=1500V(50HzSinewave,RMS)

TF561S-A

Thyristors

■Features ●Repetitivepeakoff-statevoltage:VDRM=400,600V ●Averageon-statecurrent:IT(AV)=5A ●HighsensitiveGatetriggercurrent:IGT=0.2mAmax ●Isolationvoltage:VISO=1500V(50HzSinewave,RMS)

TF561S-A

Thyristors

TFC561D

TO-220SThyristorwithbuilt-inreversediodeforHIDlampignition

■Features ●Repetitivepeakoff-statevoltage:VDRM=600V ●Repetitivepeaksurgeon-statecurrent:ITRM=430A ●Criticalrate-of-riseofon-statecurrent:di/dt=1200A/µs ●Gatetriggercurrent:IGT=20mAmax ●Withbuilt-inreversediode

TLP561G

TriacDriverProgrammableControllersAC−OutputModule

TLP561G

TriacDriverProgrammableControllersAC-OutputModuleSolidStateRelay

TriacDriver ProgrammableControllers AC-OutputModule SolidStateRelay TheTOSHIBATLP561Gconsistsofazerovoltagecrossingturn-onphoto-triacopticallycoupledtoagalliumarsenideinfraredemittingdiodeinasixleadplasticDIPpackage. •Peakoff-statevoltage:400V(min) •Trig