RF AMPLIFIER MODEL

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APITECH

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switch

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SANYO

三洋

General-Purpose Switching Device Applications

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switch

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ONSEMI

安森美半导体

ECL

Description The SJ-2810 Series of quartz crystal oscillators provide ECL 10K and 10KH series compatible signals in a ceramic SMD package. Systems designers may now specify space-saving, cost-effective packaged ECL oscillators to meet their timing requirements. Features • Wide frequency range–18

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NEL