Q67100-Q977中文资料西门子数据手册PDF规格书

The HYM 322030S/GS-50/-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by 32-bit in a 72-pin single-in-line package comprising four HYB 5117800BSJ 2M × 8 DRAMs in 400 mil wide SOJ-packages mounted together with four 0.2 µF ceramic decoupling capacitors on a PC board.

Advanced Information

• 2 097 152 words by 32-bit organization

• 1 memory bank

• Fast access and cycle time

50 ns access time

90 ns cycle time (-50 version)

60 ns access time

110 ns cycle time (-60 version)

70 ns access time

130 ns cycle time (-70 version)

• Fast page mode capability

35 ns cycle time (-50 version)

40 ns cycle time (-60 version)

45 ns cycle time (-70 version)

• Single + 5 V (± 10 ) supply

• Low power dissipation

max. 2640 mW active (-50 version)

max. 2420 mW active (-60 version)

max. 2200 mW active (-70 version)

CMOS – 22 mW standby

TTL –44 mW standby

• CAS-before-RAS refresh RAS-only-refresh Hidden-refresh

• 4 decoupling capacitors mounted on substrate

• All inputs, outputs and clocks fully TTL compatible

• 72 pin Single in-Line Memory Module (L-SIM-72-9 ) with 20.32 mm (800 mil) height

• Utilizes four 2M × 8 -DRAMs in 400 mil SOJ packages

• 2048 refresh cycles / 32 ms with 11/10 addressing

• Optimized for use in byte-write non-parity applications

• Tin-Lead contact pads (S-version)

• Gold contact pads (GS - version)