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Q67100-Q2149中文资料西门子数据手册PDF规格书
Q67100-Q2149规格书详情
3.3V 256 K x 16-Bit EDO-DRAM
3.3V 256 K x 16-Bit EDO-DRAM
(Low power version with Self Refresh)
The HYB 314175BJ/BJL is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 314175BJ/BJL to be packed in a standard plastic 400mil wide P-SOJ-40-1 package. This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. System oriented features include Self Refresh (L-Version), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families.
Preliminary Information
• 262 144 words by 16-bit organization
• 0 to 70 °C operating temperature
• Fast access and cycle time
• RAS access time:
50 ns (-50 version)
55 ns (-55 version)
60 ns (-60 version)
• CAS access time:
13ns (-50 & -55 version)
15 ns (-60 version)
• Cycle time:
89 ns (-50 version)
94 ns (-55 version)
104 ns (-60 version)
• Hype page mode (EDO) cycle time
20 ns (-50 & -55 version)
25 ns (-60 version)
• High data rate
50 MHz (-50 & -55 version)
40 MHz (-60 version)
• Single + 3.3 V (±0.3 V) supply with a builtin VBB generator
• Low Power dissipation
max. 450 mW active (-50 version)
max. 432 mW active (-55 version)
max. 378 mW active (-60 version)
• Standby power dissipation
7.2 mW standby (TTL)
3.6 mW max. standby (CMOS)
0.72 mW max. standby (CMOS) for
Low Power Version
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify write, CASbefore-RAS refresh, RAS-only refresh, hidden-refresh and hyper page (EDO) mode capability
• 2 CAS / 1 WE control
• Self Refresh (L-Version)
• All inputs and outputs TTL-compatible
• 512 refresh cycles / 16 ms
• 512 refresh cycles / 128 ms
Low Power Version only
• Plastic Packages:
P-SOJ-40-1 400mil width
产品属性
- 型号:
Q67100-Q2149
- 制造商:
INFINEON
- 制造商全称:
Infineon Technologies AG
- 功能描述:
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INFINEON/英飞凌 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
INFINEON |
17+ |
NA |
6200 |
100%原装正品现货 |
询价 | ||
INFINEON/英飞凌 |
23+ |
98900 |
原厂原装正品现货!! |
询价 | |||
INFINEON/英飞凌 |
25+ |
996880 |
只做原装,欢迎来电资询 |
询价 | |||
LNFINE |
24+ |
TSSOP() |
200 |
询价 | |||
SIEMENS/西门子 |
24+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
infineon |
16+ |
2500 |
进口原装现货/价格优势! |
询价 | |||
LNFINE |
2023+ |
TSSOP |
50000 |
原装现货 |
询价 | ||
INFINEON |
23+ |
8000 |
只做原装现货 |
询价 |