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Q67100-Q2149中文资料西门子数据手册PDF规格书

Q67100-Q2149
厂商型号

Q67100-Q2149

功能描述

3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

文件大小

1.3072 Mbytes

页面数量

24

生产厂商 Siemens Semiconductor Group
企业简称

SIEMENS西门子

中文名称

德国西门子股份公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-6-26 17:23:00

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Q67100-Q2149规格书详情

3.3V 256 K x 16-Bit EDO-DRAM

3.3V 256 K x 16-Bit EDO-DRAM

(Low power version with Self Refresh)

The HYB 314175BJ/BJL is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 314175BJ/BJL to be packed in a standard plastic 400mil wide P-SOJ-40-1 package. This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. System oriented features include Self Refresh (L-Version), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families.

Preliminary Information

• 262 144 words by 16-bit organization

• 0 to 70 °C operating temperature

• Fast access and cycle time

• RAS access time:

50 ns (-50 version)

55 ns (-55 version)

60 ns (-60 version)

• CAS access time:

13ns (-50 & -55 version)

15 ns (-60 version)

• Cycle time:

89 ns (-50 version)

94 ns (-55 version)

104 ns (-60 version)

• Hype page mode (EDO) cycle time

20 ns (-50 & -55 version)

25 ns (-60 version)

• High data rate

50 MHz (-50 & -55 version)

40 MHz (-60 version)

• Single + 3.3 V (±0.3 V) supply with a builtin VBB generator

• Low Power dissipation

max. 450 mW active (-50 version)

max. 432 mW active (-55 version)

max. 378 mW active (-60 version)

• Standby power dissipation

7.2 mW standby (TTL)

3.6 mW max. standby (CMOS)

0.72 mW max. standby (CMOS) for

Low Power Version

• Output unlatched at cycle end allows two-dimensional chip selection

• Read, write, read-modify write, CASbefore-RAS refresh, RAS-only refresh, hidden-refresh and hyper page (EDO) mode capability

• 2 CAS / 1 WE control

• Self Refresh (L-Version)

• All inputs and outputs TTL-compatible

• 512 refresh cycles / 16 ms

• 512 refresh cycles / 128 ms

Low Power Version only

• Plastic Packages:

P-SOJ-40-1 400mil width

产品属性

  • 型号:

    Q67100-Q2149

  • 制造商:

    INFINEON

  • 制造商全称:

    Infineon Technologies AG

  • 功能描述:

    3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

供应商 型号 品牌 批号 封装 库存 备注 价格
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
INFINEON/英飞凌
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
INFINEON
17+
NA
6200
100%原装正品现货
询价
INFINEON/英飞凌
23+
98900
原厂原装正品现货!!
询价
INFINEON/英飞凌
25+
996880
只做原装,欢迎来电资询
询价
LNFINE
24+
TSSOP()
200
询价
SIEMENS/西门子
24+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
infineon
16+
2500
进口原装现货/价格优势!
询价
LNFINE
2023+
TSSOP
50000
原装现货
询价
INFINEON
23+
8000
只做原装现货
询价