首页>Q67060-S7002-A2>规格书详情
Q67060-S7002-A2中文资料英飞凌数据手册PDF规格书
Q67060-S7002-A2规格书详情
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
特性 Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits
产品属性
- 型号:
Q67060-S7002-A2
- 制造商:
INFINEON
- 制造商全称:
Infineon Technologies AG
- 功能描述:
Smart Four Channel Highside Power Switch