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General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions.
Features
● Overload protection
● Current limitation
● Short circuit protection
● Thermal shutdown
● Overvoltage protection (including load dump)
● Fast demagnetization of inductive loads
● Reverse battery protection1)
● Undervoltage and overvoltage shutdown with auto-restart and hysteresis
● Open drain diagnostic output
● Open load detection in ON-state
● CMOS compatible input
● Loss of ground and loss of Vbb protection
● Electrostatic discharge (ESD) protection
● Green Product (RoHS compliant)
● AEC Qualified
Application
● μC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
● Most suitable for inductive loads
● Replaces electromechanical relays, fuses and discrete circuits
产品属性
- 型号:
Q67060-S6103-A3
- 制造商:
INFINEON
- 制造商全称:
Infineon Technologies AG
- 功能描述:
Smart Highside Power Switch