Q67045A5051中文资料英飞凌数据手册PDF规格书

CoolMOS™ Power Transistor

Features

• New revolutionary high voltage technology

• Intrinsic fast-recovery body diode

• Extremely low reverse recovery charge

• Ultra low gate charge

• Extreme dv /dt rated

• High peak current capability

• Periodic avalanche rated

• Qualified for industrial grade applications according to JEDEC1)

• Pb-free lead plating; RoHS compliant