Features:

Chip technology: InGaAlP / InGaN on Sapphire

Typ. Radiation: 120°

Color: λdom = 622 nm (● red); λdom = 528 nm (● true green); λdom = 472 nm (● blue)

ESD: 500V acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 1B)