GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power)

Features • Typ. total radiant power: 24 mW @ 100 mA in TOPLED® package. • Chip size 300 x 300 μm2 • Peak wavelength: 950 nm • Very highly efficient GaAs LED • Good linearity (Ie = f [IF]) at high currents • DC or pulsed operations are possible • High reliability • High pulse handling capa

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艾迈斯欧司朗