Silicon NPN Phototransistor Arrays

Features - Package: clear epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Spectral range of sensitivity: (typ) 450 ... 1100 nm - Multiple-digit array package - High linearity - Available in groups 

文件：1.13433 Mbytes 页数：15 Pages

AMSCO

艾迈斯欧司朗

Silicon NPN Phototransistor Arrays

Features - Package: clear epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Spectral range of sensitivity: (typ) 450 ... 1100 nm - Multiple-digit array package - High linearity - Available in groups 

文件：1.13425 Mbytes 页数：15 Pages

AMSCO

艾迈斯欧司朗

Silicon PIN Photodiode

Features - Package: black epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Wavelength range (S10) 750 nm to 1100 nm - Short switching time (typ. 5 ns) - 5 mm LED plastic package 

文件：1.14096 Mbytes 页数：15 Pages

AMSCO

艾迈斯欧司朗

Mini-Silicon NPN Phototransistor

Features - Package: clear epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Spectral range of sensitivity: (typ) 450 ... 1100 nm - High linearity - Available in groups 

文件：1.16799 Mbytes 页数：16 Pages

AMSCO

艾迈斯欧司朗

Silicon PIN Photodiode

Features - Package: black epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Wavelength range (S10) 750 nm to 1100 nm - Short switching time (typ. 5 ns) - 5 mm LED plastic package 

文件：1.14096 Mbytes 页数：15 Pages

AMSCO

艾迈斯欧司朗

GaAlAs Light Emitting Diode (660 nm)

Features: • Radiation without IR in the visible red range • Cathode is electrically connected to the case • High reliability • Short switching times • Same package as BP 103, LD 242 • DIN humidity category in acc. with DIN 40 040 GQG Applications • Photointerrupters • Fiber optic transmis

文件：172.98 Kbytes 页数：10 Pages

OSRAM

艾迈斯欧司朗

Mini-Silicon NPN Phototransistor

Features - Package: clear epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Spectral range of sensitivity: (typ) 450 ... 1100 nm - High linearity - Available in groups 

文件：1.16799 Mbytes 页数：16 Pages

AMSCO

艾迈斯欧司朗

GaAlAs-Lumineszenzdiode (660 nm)

Features: • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Spectral match with silicon photodetectors • Hermetically sealed package Applications • Photointerrupters • IR remote control • Sensor technology • Light curtains

文件：149.28 Kbytes 页数：7 Pages

OSRAM

艾迈斯欧司朗

Chip LED 0805

Applications - Electronic Equipment - Gaming, Amusement, Gambling Features: - Package: SMT package 0805, colorless diffused resin - Chip technology: GaAsP - Typ. Radiation: 150° - Color: λdom = 570 nm (● green) - Optical efficacy: 2.5 lm/W - Corrosion Robustness Class: 3B - ESD: 2 kV a

文件：986.22 Kbytes 页数：21 Pages

OSRAM

艾迈斯欧司朗

Silicon NPN Phototransistor

Features - Package: hermetically sealed - Spectral range of sensitivity: (typ) 400 ... 1100 nm - Hermetically sealed metal can package (TO-18), suitable up to 125 °C - Base connection - High photosensitivity - Available in groups 

文件：1.20705 Mbytes 页数：16 Pages

AMSCO

艾迈斯欧司朗