Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter

Features ● Especially suitable for applications from 400 nm to 1100 nm (SFH 217) and of 880 nm (SFH 217 F) ● Short switching time (typ. 5 ns) ● 5 mm LED plastic package Applications ● Industrial electronics ● For control and drive circuits ● Light reflecting switches for ste

文件：152.4 Kbytes 页数：4 Pages

SIEMENS

西门子

Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time

Features ● Especially suitable for applications from 400 nm to 1100 nm (SFH 2030) and of 880 nm (SFH 2030 F) ● Short switching time (typ. 5 ns) ● 5 mm LED plastic package ● Also available on tape Applications ● Industrial electronics ● For control and drive circu

文件：225.22 Kbytes 页数：4 Pages

SIEMENS

西门子

Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter

Features ● Especially suitable for applications from 400 nm to 1100 nm (SFH 2030) and of 880 nm (SFH 2030 F) ● Short switching time (typ. 5 ns) ● 5 mm LED plastic package ● Also available on tape Applications ● Industrial electronics ● For control and drive circu

文件：199.01 Kbytes 页数：4 Pages

SIEMENS

西门子

Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter

Features ● Especially suitable for applications from 400 nm to 1100 nm (SFH 2030) and of 880 nm (SFH 2030 F) ● Short switching time (typ. 5 ns) ● 5 mm LED plastic package ● Also available on tape Applications ● Industrial electronics ● For control and drive circu

文件：199.01 Kbytes 页数：4 Pages

SIEMENS

西门子

Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time

Features ● Especially suitable for applications from 400 nm to 1100 nm (SFH 2030) and of 880 nm (SFH 2030 F) ● Short switching time (typ. 5 ns) ● 5 mm LED plastic package ● Also available on tape Applications ● Industrial electronics ● For control and drive circu

文件：225.22 Kbytes 页数：4 Pages

SIEMENS

西门子

NPN-Silizium-Fototransistor Silicon NPN Phototransistor

Features ●Especially suitable for applications from 450 nm to 1100 nm (SFH 303) and of 880 nm (SFH 303 FA) ●High linearity ●5 mm LED plastic package ●Also available on tape and in groups Applications ●Photointerrupters ●Industrial electronics ●For control and drive circui

文件：250.3 Kbytes 页数：5 Pages

SIEMENS

西门子

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Features ● Fabricated in a liquid phase epitaxy process ● Cathode is electrically connected to the case ● High reliability ● SFH 400: Same package as SFH 216 ● SFH 401: Same package as BPX 43, BPY 62 ● SFH 402: Same package as BPX 38, BPX 65 Applications ● Photointerrupters ● IR remote co

文件：64.03 Kbytes 页数：7 Pages

SIEMENS

西门子

Schnelle GaAs-IR-Lumineszenzdiode (950 nm),High-Speed GaAs Infrared Emitter (950 nm)

Features • Very highly efficient GaAs-LED • DC (with modulation) or pulsed operations are possible • High reliability • High pulse handling capability • Very short switching times (10 ns) • Suitable for surface mounting (SMT) • Available on tape and reel • SFH 4200 same package as SFH 320

文件：81.17 Kbytes 页数：7 Pages

INFINEON

英飞凌

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Features ● Fabricated in a liquid phase epitaxy process ● Cathode is electrically connected to the case ● High reliability ● SFH 400: Same package as SFH 216 ● SFH 401: Same package as BPX 43, BPY 62 ● SFH 402: Same package as BPX 38, BPX 65 Applications ● Photointerrupters ● IR remote co

文件：64.03 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN-Silizium-Fototransistor Silicon NPN Phototransistor

Features ● Especially suitable for applications from 380 nm to 1180 nm (SFH 309) and of 880 nm (SFH 309 FA) ● High linearity ● 3 mm LED plastic package ● Available in groups Applications ● Photointerrupters ● Industrial electronics ● For control and drive circuits

文件：281.02 Kbytes 页数：6 Pages

SIEMENS

西门子