HS1-82C85RH-8

Marking：Q5962R9582001VJC；Radiation Hardened CMOS Static Clock Controller/Generator

Features •ElectricallyScreenedtoSMD#5962-95820 •QMLQualifiedperMIL-PRF-38535Requirements •RadiationHardened -TotalDose.....................100krad(Si)(Max) -LatchUpFreeEPI-CMOS •VeryLowPowerConsumption •PinCompatiblewithNMOS8285andIntersi

HS1-82C85RH-Q

Marking：Q5962R9582001VJC；Radiation Hardened CMOS Static Clock Controller/Generator

Features •ElectricallyScreenedtoSMD#5962-95820 •QMLQualifiedperMIL-PRF-38535Requirements •RadiationHardened -TotalDose.....................100krad(Si)(Max) -LatchUpFreeEPI-CMOS •VeryLowPowerConsumption •PinCompatiblewithNMOS8285andIntersi

HS9-139EH-Q

Marking：Q5962F9861303VXC；Radiation Hardened Quad Voltage Comparator

Features •QMLqualifiedperMIL-PRF-38535requirements •Radiationenvironment -Latch-upfreeunderanyconditions -Totaldose(Max)......................3x105RAD(Si) -SEULETthreshold...................20MeV/cm2/mg -Lowdoserateeffectsimmunity

HS9-139RH-8

Marking：Q5962F9861301QXC；Radiation Hardened Quad Voltage Comparator

Features •QMLqualifiedperMIL-PRF-38535requirements •Radiationenvironment -Latch-upfreeunderanyconditions -Totaldose(Max)......................3x105RAD(Si) -SEULETthreshold...................20MeV/cm2/mg -Lowdoserateeffectsimmunity

HS9-139RH-Q

Marking：Q5962F9861301VXC；Radiation Hardened Quad Voltage Comparator

Features •QMLqualifiedperMIL-PRF-38535requirements •Radiationenvironment -Latch-upfreeunderanyconditions -Totaldose(Max)......................3x105RAD(Si) -SEULETthreshold...................20MeV/cm2/mg -Lowdoserateeffectsimmunity

HS9-82C85RH-8

Marking：Q5962R9582001VXC；Radiation Hardened CMOS Static Clock Controller/Generator

Features •ElectricallyScreenedtoSMD#5962-95820 •QMLQualifiedperMIL-PRF-38535Requirements •RadiationHardened -TotalDose.....................100krad(Si)(Max) -LatchUpFreeEPI-CMOS •VeryLowPowerConsumption •PinCompatiblewithNMOS8285andIntersi

HS9-82C85RH-Q

Marking：Q5962R9582001VXC；Radiation Hardened CMOS Static Clock Controller/Generator

Features •ElectricallyScreenedtoSMD#5962-95820 •QMLQualifiedperMIL-PRF-38535Requirements •RadiationHardened -TotalDose.....................100krad(Si)(Max) -LatchUpFreeEPI-CMOS •VeryLowPowerConsumption •PinCompatiblewithNMOS8285andIntersi

ISL74422ARHQF

Marking：Q5962F0152101QXC；Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers

Features •QMLQualifiedperMIL-PRF-38535Requirements •ElectricallyScreenedtoDSCCSMD#5962-01521 •RadiationEnvironment -TotalDose(Max).............300krad(SI) -Latch-UpImmune •IPEAK..........................9A(Min) •TF(CL=10,000pF

ISL74422ARHVF

Marking：Q5962F0152101VXC；Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers

Features •QMLQualifiedperMIL-PRF-38535Requirements •ElectricallyScreenedtoDSCCSMD#5962-01521 •RadiationEnvironment -TotalDose(Max).............300krad(SI) -Latch-UpImmune •IPEAK..........................9A(Min) •TF(CL=10,000pF

PJQ5410_R2_00001

Marking：Q5410；Package：DFN5060-8L；30V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A