SQJ126EP

AutomotiveN-Channel30V(D-S)175°CMOSFET

FEATURES •TrenchFET®GenIVpowerMOSFET •AEC-Q101qualified •100RgandUIStested •Qgd/Qgsratio

STS126

SuperhighdensecelldesignforlowRDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

STTC-126

SolderingToolsandEquipmentforElectronicsAssembly

T-126

3M??PetroleumSorbents

TC126

PFMStep-UpDC/DCRegulators

GeneralDescription TheTC125/126step-up(Boost)switchingregulatorsfurnishoutputcurrentstoamaximumof80mA(VIN=2V,VOUT=3V)withtypicalefficienciesabove80.Thesedevicesemploypulsefrequencymodulation(PFM)forminimumsupplycurrentatlowloads.Theyareidealforbattery-o

TCK126BG

0.08nAUltrasmallIQ1.0ALoadSwitchICinUltraSmallPackage

Feature Wideinputoperationvoltagerange:VIN=1.0to5.5V Highoutputcurrent:IOUT=1.0A UltrasmallQuiescentcurrent:IQ=0.08nAatVIN=VCT=5.5V,IOUT=0mA LowONresistance RON=58mΩ(typ.)atVIN=3.3V,IOUT=-0.5A RON=106mΩ(typ.)atVIN=1.8V,IOUT=

TCK126BG,LFS

0.08nAUltrasmallIQ1.0ALoadSwitchICinUltraSmallPackage

Feature Wideinputoperationvoltagerange:VIN=1.0to5.5V Highoutputcurrent:IOUT=1.0A UltrasmallQuiescentcurrent:IQ=0.08nAatVIN=VCT=5.5V,IOUT=0mA LowONresistance RON=58mΩ(typ.)atVIN=3.3V,IOUT=-0.5A RON=106mΩ(typ.)atVIN=1.8V,IOUT=

TG-126

HIGHENERGYSPARKGAPDEVICES

DESCRIPTION CPClare’sTGLegacySeriesoftwoelectrodesparkgapsexcelinapplicationsthatrequiretheefficienttransferofhighvoltage,highenergypulsesandDCovervoltageprotectionformagnetrons,diodes,capacitors,etc.TheTGLegacySeriesalsoincludesthreeelectrodetriggeredsp

TG-A126X

UltraSoftThermalPad

Application: Usuallyusedforindustrialcomputers,militaryproducts Features •Highthermalconductivity •Lowhardness •Highcompressibility •Electricalinsulation

THS126

HIGHSTABILITYMOTORCONTROL.DIGITALTACHOMETER.CRANKSHAFTPOSITIONSENSOR.