PZU3.0BL

Marking：H4；Package：DFN1006-2；Single Zener diodes in a SOD882 package

1.1.Generaldescription General-purposeZenerdiodesinaSOD882leadlessultrasmallSurface-MountedDevice(SMD) plasticpackage. 1.2.Features •Non-repetitivepeakrerversepowerdissipation:PZSM≤40W •Totalpowerdissipation:Ptot≤250mW •Toleranceseries:B:approximately±5

PZU3.0BL,315

Package：SOD-882；包装：卷带（TR） 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：DIODE ZENER 3V 250MW DFN1006-2

Nexperia USA Inc.

RD3.0E

SILICONZENERDIODES

RD3.0E

500mWDHDZENERDIODEDO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

RD3.0E

500mWPLANARTYPESILICONZENERDIODES

TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe

RD3.0EAB

400mWDHDZENERDIODEDO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

RD3.0EB

500mWDHDZENERDIODEDO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

RD3.0ES

400mWDHDZENERDIODEDO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

RD3.0ES

ZENERDIODES

RD3.0F

ZENERDIODES1WDO-41GLASSSEALEDPACKAGE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN