Access Times of 120, 150, 200, and 250ns Single 5V짹10 Power Supply

文件：904.59 Kbytes 页数：15 Pages

PYRAMID

Access Times of 120, 150, 200, and 250ns Single 5V짹10 Power Supply

文件：904.59 Kbytes 页数：15 Pages

PYRAMID

1 Megabit 128K x 8 Paged CMOS E2PROM

文件：657.33 Kbytes 页数：11 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

文件：570.6 Kbytes 页数：11 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Space 1-megabit (128K x 8) Paged Parallel EEPROMs

Description The AT28C010-12DK is a high-performance Electrically Erasable and Programmable Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissi

文件：236.69 Kbytes 页数：17 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司