PZT2907A

PNPswitchingtransistor

DESCRIPTION PNPswitchingtransistorinaSOT223plasticpackage. NPNcomplement:PZT2222A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.60V). APPLICATIONS •Switchingandlinearamplification.

PZT2907A

SiliconPlanarMediumPowerTransistor

DESCRIPTION •ThePZT2907Aisdesignedforgeneralpurposeamplifierandhigh-speedswitching,mediumpowerswitchingapplications.

PZT2907A

NPNSiliconPlanarEpitaxialTransistor

PNPSiliconPlanarEpitaxialTransistor P/bLead(Pb)-Free

PZT2907A

SOT-223Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES •Epitaxialplanardieconstruction •ComplementaryPNPTypeavailable(PZT2222A)

PZT2907A

PNPTransistors

■Features ●Epitaxialplanardieconstruction ●ComplementarytoPZT2222A

PZT2907A

PNPGENERALPURPOSEAMPLIFIER

■DESCRIPTION ThisUTCPZT2907Aisdesignedforuseasageneralpurposeamplifierandswitchrequiringcollectorcurrentsto500mA.

PZT2907A

PNPPlastic-EncapsulateTransistors

Features •SurfaceMountSOT-223Package •Capableof1WattsofPowerDissipation •Ic:0.6A •Marking:ZT2907A •OperatingandStorageJunctionTemperatures:-55°Cto150°C •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequestbyadd

PZT2907A

PNPSiliconEpitaxialTransistor

PNPSiliconEpitaxialTransistor ThisPNPSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. Features •NPNComplementisPZT2222AT1 •TheSOT-223Pa

PZT2907A

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

PZT2907A

PN2907A/MMBT2907A/PZT2907A60VPNPGeneralPurposeTransistor

Description ThePN2907A,MMBT2907A,andPZT2907Aare60V-PNPbipolartransistorsdesignedforuseasageneral-purposeamplifierorswitchinapplicationsthatrequireupto500mA.Offeredinanultra-smallsurface-mountpackage(SOT-223),thePZT2907Aisidealforspace-constrainedsystems.T