丝印：PXT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：1P；Package：SOT-89-3L；SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Epitaxial planar die construction ● Complementary PNP Type available(PXT2907A)

文件：2.92864 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：1P；Package：SOT89；NPN switching transistors

1. General description NPN switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) Surface- Mounted Device (SMD) plastic package. PNP complement: PXT2907A 2. Features and benefits • High current: max. 600 mA • Low voltage: max. 40 V 3. Applications • Switching and linear ampl

文件：807.62 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：p2F；Package：SOT-89；PNP General Purpose Amplifier

FEATURES ● High current. ● Low voltage. APPLICATIONS ● Switching and linear amplification.

文件：137.67 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：2F；Package：SOT89；60 V, 600 mA, PNP switching transistor

1. General description PNP switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) Surface- Mounted Device (SMD) plastic package. NPN complement: PXT2222A 2. Features and benefits • High current: max. 600 mA • Low voltage: max. 60 V • AEC-Q101 qualified 3. Applications • Swi

文件：720.46 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：P2F；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ® Switching and Linear Amplification ® High Current and Low Voltage ® Complement to PXT2222A

文件：1.36905 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：1A；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES e Compliment to PXT3906 e Low current e Low voltage

文件：749.25 Kbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：1A；Package：SOT-89；Plastic-Encapsulate Transistors

FEATURES Compliment to PXT3906U Low current Low voltage

文件：1.3233 Mbytes 页数：2 Pages

GWSEMI

唯圣电子

丝印：2A；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Compliment to PXT3904 Low current Low voltage

文件：1.5286 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：2X；Package：SOT89；NPN switching transistor

FEATURES •High current (max. 600 mA) •Low voltage (max. 40 V). APPLICATIONS •Switching and linear amplification in industrial and consumer applications. DESCRIPTION NPN switching transistor in a SOT89 plastic package. PNP complement: PXT4403.

文件：369.93 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司