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TC1307

Four-ChannelCMOSLDOwithSelectMode,ShutdownandIndependentReset

Description TheTC1307combinesfourCMOSLowDropoutLinearRegulatorswithaMicrocontrollerMonitorinaspacesaving16-PinQSOPpackage.Developedspecificallyforbatterypoweredportableapplications,allfouroutputsoftheTC1307typicallyconsumeatotalof220µAsupplycurrent,holdth

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

TDA1307

High-performancebitstreamdigitalfilter

FEATURES •Multipleformatinputs:I2S,Sony16,18and20-bit •8-sampleinterpolationerrorconcealment •Digitalmute,attenuation−12dB •Digitalaudiooutputfunction(biphase-markencoded)accordingtoIEC958 •Digitalsilencedetection(output) •Digitalde-emphasis(sele

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

TGA1307

KaBandLowNoiseAmplifier

KeyFeaturesandPerformance •0.25umpHEMTTechnology •23-29GHzFrequencyRange •3.1dBNominalNoiseFigure28GHz •17dBNominalGain •OTOI>22dBm •5V,50mASelf-Bias PrimaryApplications •Point-to-PointRadio •Point-to-MultipointCommunications

TriQuint

TriQuint Semiconductor

TGA1307-EPU

KaBandLowNoiseAmplifier

KeyFeaturesandPerformance •0.25umpHEMTTechnology •23-29GHzFrequencyRange •3.1dBNominalNoiseFigure28GHz •17dBNominalGain •OTOI>22dBm •5V,50mASelf-Bias PrimaryApplications •Point-to-PointRadio •Point-to-MultipointCommunications

TriQuint

TriQuint Semiconductor

TZ1307A

HC49USDIP17.664MHzCrystalUnit

Features: SurfaceMountSeamWeldPackage GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49UScrystalunitforuseinwirelesstelecommunicationsdevices

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

VB1307N

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBA1307

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBA1307A

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBC1307

N-Channel30V(D-S)MOSFET

FEATURES •TrenchFETPowerMOSFET •100%RgTested •100%UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •NotebookSystemPower •LowCurrentDC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBE1307

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

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