PWCT2115SFVMHPR资料datasheet下载批发采购-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
PWCT2115SFVMHPR	文件：1.12915 Mbytes Page：65 Pages	Memory and memory interfaces 文件：1.12915 Mbytes 页数：65 Pages	恩XP	恩XP
RF2115	文件：101.88 Kbytes Page：8 Pages	HIGH POWER UHF AMPLIFIER Product Description The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 文件：101.88 Kbytes 页数：8 Pages	RFMD 威讯联合	RFMD
RF2115L	文件：101.88 Kbytes Page：8 Pages	HIGH POWER UHF AMPLIFIER Product Description The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 文件：101.88 Kbytes 页数：8 Pages	RFMD 威讯联合	RFMD
2115A	文件：256.32 Kbytes Page：3 Pages	Fieldbus, 20 Pr #16 Str TC, XLPO Ins, IS/OS, TPE Jkt, CMG 文件：256.32 Kbytes 页数：3 Pages	BELDEN 百通	BELDEN
2115E	文件：286.71 Kbytes Page：3 Pages	Thru-Bolts and Mounting Brackets 文件：286.71 Kbytes 页数：3 Pages	OHMITE	OHMITE
2115E	文件：293.97 Kbytes Page：2 Pages	For 200, 210, 270 and 280 Series 文件：293.97 Kbytes 页数：2 Pages	OHMITE	OHMITE

更多PWCT2115SFVMHPR供应商更新时间2025-10-7 14:16:00