| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TheProductDataAmendmentseriesofdocuments | CMLMICROCML Microcircuits CML公司 | CMLMICRO | ||
PowerTransformers-StandardEDual115V | CTCentral Technologies 中基科技中基科技（香港）有限公司 | CT | ||
PowerTransformers-StandardESingle115V | CTCentral Technologies 中基科技中基科技（香港）有限公司 | CT | ||
DATASUBJECTTOCHANGEWITHOUTNOTLCE | HAMMOND Hammond Manufacturing Ltd. | HAMMOND | ||
25V/35V,2ALow-FrequencyPowerAmpApplications? 25V/35V,2ALow-FrequencyPowerAmplifierApplications Features ·HighcollectordissipationandwideASO. | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
3.0WATTSINGLE&DUALOUTPUTDC-DCCONVERTERS | INTRONICS Intronics Power, Inc. | INTRONICS | ||
3.0WATTHIGHISOLATIONDC-DCCONVERTERS | INTRONICS Intronics Power, Inc. | INTRONICS | ||
High-Speed,Low-GlitchD/CMOSAnalogSwitches | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Speed,Low-GlitchD/CMOSAnalogSwitches | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Speed,Low-GlitchD/CMOSAnalogSwitches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Speed,Low-GlitchD/CMOSAnalogSwitches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技 | Vishay | ||
1pCChargeInjection,100pALeakage,QuadSPSTSwitches FEATURES •Halogen-freeaccordingtoIEC61249-2-21 Definition •Lowchargeinjection(1pCtyp.) •Leakagecurrent | VishayVishay Siliconix 威世科技 | Vishay | ||
1pCChargeInjection,100pALeakage,QuadSPSTSwitches DESCRIPTION TheDG611/612/613featurehigh-speedlow-capacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES ●FastSwitching—tON:12ns ●LowChargeInjection:2pC ●WideBandwidth:500MHz ●5-VCMOSL | VishayVishay Siliconix 威世科技 | Vishay | ||
1pCChargeInjection,100pALeakage,QuadSPSTSwitches | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Speed,Low-GlitchD/CMOSAnalogSwitches | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Speed,Low-GlitchD/CMOSAnalogSwitches | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Speed,Low-GlitchD/CMOSAnalogSwitches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Speed,Low-GlitchD/CMOSAnalogSwitches FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5VCMOSlogiccompatible •LowRDS(on):18 •Lowquiescentpower:1.2nW •Singlesupplyoperation BENEFITS •Improveddatathroughput •Minimalswitchingtransients •Improvedsystem | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Speed,Low-GlitchD/CMOSAnalogSwitches DESCRIPTION TheDG611,DG612,DG613featurehigh-speedlowcapacitancelateralDMOSswitches.Chargeinjectionhasbeenminimizedtooptimizeperformanceinfastsample-and-holdapplications. FEATURES •Fastswitching-tON:12ns •Lowchargeinjection:±2pC •Widebandwidth:500MHz •5 | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Speed,Low-GlitchD/CMOSAnalogSwitches | VishayVishay Siliconix 威世科技 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IOR |
21+ |
DIP6 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
23+ |
DIP6 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
DIP6 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
IOR |
19+ |
DIP6 |
851 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
23+ |
NA/ |
851 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IOR |
19+ |
SOP6 |
1636 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
ELNA |
2008 |
62500 |
询价 | ||||
ELNA |
2022+ |
SMD |
55800 |
原厂代理 终端免费提供样品 |
询价 |
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