PVB42004X中文资料飞利浦数据手册PDF规格书

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445A) with the common base connected to the flange.

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

• Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime

• Multicell geometry gives good balance of dissipated power and low thermal resistance.

APPLICATIONS

• Intended for use in common base class-B power amplifiers up to 4.2 GHz.