UCCx8C5x BiCMOS Low-Power Current-Mode PWM Controller

1 Features • 28-V VDD recommended max operating ratings • New undervoltage lockout options to support both Si and SiC MOSFET applications • Operating frequency: 1 MHz • 50-μA Standby Current, 75-μA Maximum • Low operating current: 1.3 mA (@ fOSC = 52 kHz) • Fast, cycle-by-cycle overcurrent

文件：3.20189 Mbytes 页数：48 Pages

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.27019 Mbytes 页数：51 Pages

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.39027 Mbytes 页数：53 Pages

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.27019 Mbytes 页数：51 Pages

TI

德州仪器

UCCx8C5x BiCMOS Low-Power Current-Mode PWM Controller

1 Features • 28-V VDD recommended max operating ratings • New undervoltage lockout options to support both Si and SiC MOSFET applications • Operating frequency: 1 MHz • 50-μA Standby Current, 75-μA Maximum • Low operating current: 1.3 mA (@ fOSC = 52 kHz) • Fast, cycle-by-cycle overcurrent

文件：3.20189 Mbytes 页数：48 Pages

TI

德州仪器

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28

文件：3.38736 Mbytes 页数：52 Pages

TI

德州仪器