PUCC21551DQDWKRQ1中文资料德州仪器数据手册PDF规格书

1 Features

• Universal: dual low-side, dual high-side or halfbridge

driver

• AEC-Q100 qualified with the following results

– Device temperature grade 1

– Device HBM ESD classification level 3A

– Device CDM ESD classification level C6

• Junction temperature range –40 to +150°C

• Up to 4-A peak source and 6-A peak sink output

• Common-mode transient immunity (CMTI) greater

than 125 V/ns

• Up to 25-V VDD output drive supply

– 12-V and 17-V VDD UVLO options

• Switching parameters:

– 33-ns typical propagation delay

– 5-ns maximum delay matching

– 6-ns maximum pulse-width distortion

– 10-μs maximum VDD power-up delay

• UVLO protection for all power supplies

• Fast enable for power sequencing

2 Applications

• On-board battery chargers

• High-voltage DC-DC converter

• Automotive HVAC, body electronics

3 Description

The UCC21551x-Q1 is an isolated dual channel

gate driver family with programmable dead time and

wide temperature range. It is designed with 4-A peaksource

and 6-A peak-sink current to drive power

MOSFET, SiC, and IGBT transistors.

The UCC21551x-Q1 can be configured as two lowside

drivers, two high-side drivers, or a half-bridge

driver. The input side is isolated from the two

output drivers by a 5-kVRMS isolation barrier, with

a minimum of 125-V/ns common-mode transient

immunity (CMTI).

Protection features include: resistor programmable

dead time, disable feature to shut down both outputs

simultaneously, and integrated de-glitch filter that

rejects input transients shorter than 5 ns. All supplies

have UVLO protection.

With all these advanced features, the UCC21551x-

Q1 device enables high efficiency, high power

density, and robustness in a wide variety of power

applications.