Silicon N-Channel Power F-MOS FET

Power Transistor Arrays (F-MOS FETs) ■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for

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PANASONIC

松下

Silicon N-Channel Power F-MOS FET

Power Transistor Arrays (F-MOS FETs)■ ● Avalanche energy capacity guaranteed\n● High-speed switching\n● Low ON-resistance\n● No secondary breakdown\n● Low-voltage drive■ Applications\n● Contactless relay\n● Diving circuit for a solenoid\n● Driving circuit for a motor\n● Control equipment\n● Switching power supply ;

Panasonic

松下

RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS

RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS ■ DESIGNED FOR CLASS AB LINEAR OPERATION ■ COMMON EMITTER ■ INTERNAL INPUT/OUTPUT MATCHING ■ 26 VOLT, 960 MHz PERFORMANCE: POUT = 45 W MIN. GAIN = 8.5 dB MIN. COLLECTOR EFFICIENCY 50 MIN. ■ INHERENT RUGGEDNESS:

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STMICROELECTRONICS

意法半导体

Load Switch with Level-Shift

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VISHAYVishay Siliconix

威世威世科技公司

Silicon Epitaxial Planar Z-Diodes

Features ● Zener voltage specified at 50 μA ● Maximum delta VZ given from 10 μA to 100 μA ● Very high stability ● Low noise Applications     Voltage stabilization

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VISHAYVishay Siliconix

威世威世科技公司