PTHS2630SDR

THS2630 High-Speed, Low-Noise, Fully-Differential I/O Amplifier

1Features •Highperformance –Bandwidth:187MHz(VCC=±15V,G=1V/V) –Slewrate:75V/μs –Gainbandwidthproduct:245MHz –Distortion:–108dBcTHDat2VPP,250kHz •Voltagenoise –1/fvoltagenoisecorner:85Hz –1.1nV/√Hzinput-referrednoise •Singlesupplyoperatingrang

PTHS2630SDR

THS2630 High-Speed, Low-Noise, Fully-Differential I/O Amplifier

1Features •Highperformance –Bandwidth:187MHz(VCC=±15V,G=1V/V) –Slewrate:75V/μs –Gainbandwidthproduct:245MHz –Distortion:–108dBcTHDat2VPP,250kHz •Voltagenoise –1/fvoltagenoisecorner:85Hz –1.1nV/√Hzinput-referrednoise •Singlesupplyoperatingrang

PXIS-2630

18/14/8-Slot3UPXIChassis

QCT2630

CoaxialTerminations

Features: *LowVSWR *Broadband Applications: *Transmitters *Antennas *LaboratoryTest *ImpedanceMatching

QFA2630

FixedAttenuators

Features: *LowVSWR *HighAttenuationFlatness Applications: *Wireless *Transmitter *LaboratoryTest *Radar

SBJ2630

SMDSchottkyBarrierRectifierDiodes

SBJ2630

SchottkyBarrierRectifierDiodes-SingleDiode

Features Isolatedheatflange Besttrade-offbetweenVFandIR2) Lowforwardvoltagedrop Highpowerdissipation ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications OutputRectificationinDC/DC ConvertersandPowerSupplies PolarityProtectio

SBT2630

SchottkyBarrierRectifiers??SingleDiode

SchottkyBarrierRectifiers–SingleDiode •Nominalcurrent26A •Repetitivepeakreversevoltage20...40V •PlasticcaseTO-220AC •Weightapprox.1.8g •PlasticmaterialhasULclassification9

SM2630DSC

DualN-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

SM2630DSC

DualN-ChannelEnhancementModeMOSFET