PTGH7565S1数据手册Panjit中文资料规格书

描述 Description

PTGH7565S1 is engineered using field-stop trench technology, featuring a high-density trench cell design. This design assembled in TO-247-3L package ensures Low VCESAT with low conduction losses, outstanding switching capabilities, and optimal tail buffer doping to improve EMI performance. The high-speed IGBT is ideal for high-frequency applications, including UPS systems, PV inverters, EV charging stations, welding machines, and household appliances.

特性 Features

• Low saturation voltage 1.65V at TVJ 25 oC
• Co-packed with low Qrr and soft recovery diode
• Maximum junction temperature TVJ 175 oC
• Easy paralleling usage due to positive coefficient VCEsat
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard