650V N-ch Planar MOSFET

PIPSEMI

丽隽半导体

650V N-ch Planar MOSFET

文件：8.65882 Mbytes 页数：9 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

650V N-ch Planar MOSFET

文件：7.60654 Mbytes 页数：9 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired

文件：410.8 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 4A, RDS(ON) = 2.4Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

文件：399.7 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired

文件：410.8 Kbytes 页数：4 Pages

CET

华瑞