压力变送器, PT-160-SEG14-A-ZVG/VE

IFM

易福门电子

Silicon N Channel MOS FET High Speed Power Switching

Features Low on-resistance RDS(on) = 0.515Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25℃) Low leakage current High speed switching

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RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件：89.01 Kbytes 页数：7 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.62Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电