PT2395

Enhanced Digital Echo IC

DESCRIPTION PT2395isasilicongateCMOS-processeddigitalechoICfunctionallycompatiblewithM50195P.InputsignaltoPT2395isconvertedtodigitalsignalwithA-Dconversionthenstoredinthememory(DRAM)chip.Afteracertaindelaytime,digitalsignalisreadoutfromthememorychipan

2395

BandpassFilter

2395A

9kHzto26.5GHzSpectrumAnalyzer

CDD2395

NPNSILICONEPITAXIALPOWERTRANSISTOR

NPNSILICONEPITAXIALPOWERTRANSISTOR DesignedForRelaydriveandDC-DCConverter.

CHA2395

36-40GHzLowNoiseVeryHighGainAmplifier

Description TheCHA2395isafour-stagemonolithiclownoiseamplifier.Itisdesignedforawiderangeofapplications,frommilitarytocommercialcommunicationsystems.ThecircuitismanufacturedwithaHEMTprocess:0.25µmgatelength,viaholesthroughthesubstrate,airbridgesandelectr

CHA2395

36-40GHzLowNoiseVeryHighGainAmplifier

CRO2395A-LF

Voltage-ControlledOscillatorSurfaceMountModule

D2395

ForPowerAmplification(50V,3A)

2SB1566 PowerTransistor(-50V,-3A) Features 1)Lowsaturationvoltage,typicallyVCE(sat)=-0.3VatIC/IB=-2A/-0.2A 2)WideSOA(safeoperatingarea). 3)Complementsthe2SD2395. 2SD2395 PowerTransistor(50V,3A) Features 1)Lowsaturationvoltage,typicallyVCE(sat)=0.2Vat

ECQE2395

MetallizedPolyesterFilmCapacitor

MetallizedPolyesterFilmCapacitor Non-inductiveconstructionusingmetallizedPolyesterfilmwithflameretardantepoxyresincoating ■Features •Self-healingproperty •Excellentelectricalcharacteristics •Flameretardantepoxyresincoating •RoHSdirectivecompliant ■RecommendedAp

ECQE2395

MetallizedPolyesterFilmCapacitor