MINIATURE PRESSURE AND VACUUM SWITCHES

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OMEGA

AIGAAS INFRARED EMITTING DIODE

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QT

慣-棺-款-Strahlungsdetektor 慣-棺-款-Radiation Detector

Features Substrate: 4600±1400Ωcm Chip thickness: 381±15µm Topside: Aluminium contact 1.4µm Aluminium total cover 0.1µm Backside: 0.4µm Au/As ●Low dark current ●Low capacitance ●High breakdown voltage permits operation at full depletion

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SIEMENS

西门子

programmable controllers dc-output module solid state relay

Programmable Controllers DC−Output Module Solid State Relay The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide infrared emitting diode coupled with a silicon, darlington connected, phototransistor which has an integral base−emitter resistor to optimize switching speed and elevated t

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TOSHIBA

东芝