PSMPSMR8510L

Silicon Power Diode

SP8510

12-BitSamplingA/DConverters

DESCRIPTION… TheSP85XXSeriesarecomplete12-bitsamplingA/Dconvertersusingstate–of–the–artCMOSstructures.Theycontainacomplete12–bitsuccessiveapproximationA/Dconverterwithinternalsample/hold,reference,clock,digitalinterfaceformicroprocessorcontrol,andthree–stateoutpu

SP8510KN

12-BitSamplingA/DConverters

DESCRIPTION… TheSP85XXSeriesarecomplete12-bitsamplingA/Dconvertersusingstate–of–the–artCMOSstructures.Theycontainacomplete12–bitsuccessiveapproximationA/Dconverterwithinternalsample/hold,reference,clock,digitalinterfaceformicroprocessorcontrol,andthree–stateoutpu

SP8510KS

12-BitSamplingA/DConverters

DESCRIPTION… TheSP85XXSeriesarecomplete12-bitsamplingA/Dconvertersusingstate–of–the–artCMOSstructures.Theycontainacomplete12–bitsuccessiveapproximationA/Dconverterwithinternalsample/hold,reference,clock,digitalinterfaceformicroprocessorcontrol,andthree–stateoutpu

TCP8510

MouldedTypeStraightPlugs

TDA8510

26WBTLand2x13WSEpoweramplifiers

TDA8510J

26WBTLand2x13WSEpoweramplifiers

TPCP8510

TransistorSiliconNPNEpitaxialType

High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications •HighDCcurrentgain:hFE=120to300(IC=0.1A) •Lowcollector-emittersaturation:VCE(sat)=0.14V(max) •High-speedswitching:tf=0.2μs(typ)

TPCP8510

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”.  GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda