PSMN3R5-40YSD中文资料安世数据手册PDF规格书

1. General description

120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56

package using advanced TrenchMOS Superjunction technology. This product has been designed

and qualified for high performance power switching applications.

2. Features and benefits

• 120 A capability

• Avalanche rated, 100 tested at I(AS) = 120 A

• NextPower-S3 technology delivers 'superfast switching with soft recovery'

• Low QRR, QG and QGD for high system efficiency and low EMI designs

• Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage

• Low VSD Schottky-like body-diode

• Tighter VGS(th) limits for improved paralleling

• Wide Safe Operating Area (SOA) for reliable linear mode operation

• High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to

175 °C

• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

3. Applications

• Synchronous rectification

• DC-to-DC converters

• High performance and high efficiency power supplies

• BLDC motor control