PSMN3R2-40YLD中文资料安世数据手册PDF规格书

厂商型号	PSMN3R2-40YLD
功能描述	N-channel 40 V, 3.3 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology
丝印标识	3D2L40Y
封装外壳	SOT669
文件大小	311.07 Kbytes
页面数量	13 页
生产厂商	NEXPERIA
中文名称	安世
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-19 11:30:00
人工找货	PSMN3R2-40YLD价格和库存，欢迎联系客服免费人工找货

1. General description

120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package

using advanced TrenchMOS Superjunction technology. This product has been designed and

qualified for high performance power switching applications.

2. Features and benefits

• 120 A continuous ID(max) rating

• Avalanche rated, 100 tested at IAS = 120 A

• Strong SOA (linear-mode) rating

• NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'

• Low QRR, QG and QGD for high system efficiency and low EMI designs

• Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage

• Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology

• High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to

175 °C

• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

• Low parasitic inductance and resistance

3. Applications

• High-performance synchronous rectification

• DC-to-DC converters

• Brushless DC motor control

• Battery protection

• Load-switch and eFuse