N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88

1. General description In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally. Small d

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安世安世半导体(中国)有限公司

N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88

description N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R9-80SSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip

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安世安世半导体(中国)有限公司

NXP
SOT

恩XP

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Nexperia
TO-263

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

上传：深圳市铭尔达科技有限公司

PROTEK
SOT143

Protek

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