PSMN1R5-25MLH中文资料安世数据手册PDF规格书

厂商型号	PSMN1R5-25MLH
功能描述	N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
丝印标识	1H525L
封装外壳	SOT1210
文件大小	301.51 Kbytes
页面数量	12 页
生产厂商	NEXPERIA
中文名称	安世
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-16 14:36:00
人工找货	PSMN1R5-25MLH价格和库存，欢迎联系客服免费人工找货

1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.

NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A

and optimized with low gate resistance (RG) for fast-switching applications.

2. Features and benefits

• Optimized for low RDSon and low gate resistance (RG)

• Fast switching – reduced switching losses

• Strong linear-mode (SOA) rating

• Low leakage < 1 μA at 25 °C

• Low spiking and ringing for low EMI designs

• Optimized for 4.5 V gate drive

• 150 A continuous ID(max) rating

• High reliability copper-clip bonded and solder die attach LFPAK33 package

• Qualified to 175 °C

• Exposed leads for optimal visual solder inspection

3. Applications

• Synchronous buck regulator

• Synchronous rectifier in AC-DC and DC-DC applications

• BLDC (brushless) motor control

• eFuse and battery protection

• OR-ing and hot-swap