PSMN0R9-30ULD中文资料安世数据手册PDF规格书

1. General description

SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic

level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3

portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking

performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode

but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency

applications at high switching frequencies.

2. Features and benefits

• Improved creepage and clearance – meets the requirements of UL2595

• 300 A capability

• Avalanche rated, 100 tested at IAS = 190 A

• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching

frequencies

• Superfast switching with soft-recovery; s-factor > 1

• Low spiking and ringing for low EMI designs

• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C

• Optimised for 4.5 V gate drive

• Low parasitic inductance and resistance

• High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds,

qualified to 150 °C

• Wave solderable; exposed leads for optimal visual solder inspection

3. Applications

• Brushed and brushless motor control

• Battery powered appliances where enhanced creepage and clearance is required to meet

UL2595

• For non-UL2595 applications please use PSMN0R9-30YLD